|
showing 1 - 14 of 14
|
|
|
Branson IPC L2101
|
|
Branson/IPC Mod. S2100-11220 Reactor Center, w/1ea 12"(dia) x 20"(D) quartz chamber.
|
|
|
|
|
Inquire
|
|
|
Branson IPC L3200
|
|
Dual quartz chambers for 100-150mm wafers, cassette to cassette operation.
|
|
|
|
|
Inquire
|
|
|
GaSonics 7104
|
|
The GaSonics 7104 tool is a batch plasma system. Processing is accomplished at low temperature, and is used for surface treatment, descum, and cleaning organic material such as photoresist from metal, silicon and other assemblies.
|
|
|
|
|
Inquire
|
|
|
GaSonics AE2001 Etch System
|
|
The AE2001 is a single wafer downstream-isotropic etch system, designed to etch thin films such as polysilicon, silicon nitride, and CVD oxides.
|
|
|
|
|
Inquire
|
|
|
GaSonics IPC Series 9104 Plasma Asher
|
|
A plasma asher/etcher/stripper--part of the IPC series. The system includes a multistep / multirecipe capability.
|
|
|
|
|
Inquire
|
|
|
GaSonics L3500
|
|
Inquire
|
|
|
GaSonics L3500(2)
|
|
Inquire
|
|
|
GaSonics L3500(3)
|
|
Inquire
|
|
|
GaSonics L3510 Single Wafer Ashing System
|
|
A downstream photoresist removal system designed for clean and damage-free removal of resist structures. Works with 75-200mm wafers.
|
|
|
|
|
Inquire
|
|
|
March PX-1000 Batch RIE Asher/Etcher System
|
|
This is a downstream RIE or isotropic plasma barrel asher/etcher system. It comes with the RF generator: Advanced Energy RFX-600 (AE RFX-600) and a refrigerated circulator: Remcor CFF-500.
|
|
|
|
|
Inquire
|
|
|
Matrix 403 Etcher
|
|
Electromechanical production system used to etch materials (such as but not limited to: nitride, oxide, and polysilicon) from the surface of silicon or other substrates.
|
|
|
|
|
Inquire
|
|
|
Technics PEIIB Planar Etch Plasma System
|
An oxygen planar etcher that may be used for surface activiation and/or photoresist descum. It has a raised chamber for wafer sizes 4", 5", and 6".
|
|
|
|
|
Inquire
|
|
|
Tegal 903E Plasma Etch System
|
|
This in-line single wafer plasma etcher has the capability to etch vias and contacts with anisotropic or sloped profiles. It is for etching silicon dioxide, silicon nitrides, and polyimides. It can handle wafers from 3" - 6" (Customer to specify desired wafer size setup).
|
|
|
|
|
Inquire
|
|
|
Yield Engineering YES R-3 Plasma Cleaning System
|
|
A low cost, low volume, plasma cleaning system with sequencer control. It comes with a capacitive downstream reactor and a multi-program microprocessor controller.
|
|
|
|
|
Inquire
|
|
showing 1 - 14 of 14
|